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Dielectrics historically has had signi cant focus on the reliability due to the need to understand dielectric breakdown [51 60]; MOSFET electric eld scaling theory requires the continuous scaling of the thin oxide to achieve MOSFET device performance Additionally, dielectric breakdown during electrical overstress (EOS) and electrostatic discharge (ESD) had signi cant focus due to the concern of MOSFET gate dielectric breakdown and failure during ESD events [61 81] A primary focus has been on the failure of NMOS and CMOS digital receiver networks where the MOSFET inverter circuit failure occurred in the n-channel MOSFET gate dielectric CMOS digital receiver networks failure concerns occurred as a result of the human body model (HBM), machine model (MM), and charged device model (CDM) [66] Considerable focus has been given to the CDM and its impacts on MOSFET gates in CMOS receiver networks [62,66 70].

, Kostka, J, Frischer, ME, Saunders, FM, and Jahnke, RA, 2001, A quantitative relationship that demonstrates mercury methylation rates in marine sediments are based on the community composition and activity of sulfate-reducing Bacteria Environmental Science and Technology, 35: 2491 2496 Kitanidis, PC, 1997, Introduction to Geostatistics: applications in hydrogeology Cambridge University Press, Cambridge Klimchouk, AB, Lowed, D, Cooper, AH, and Sauro, U (eds), 1996, Gypsum karst of the world International Journal of Speleology, 25(3 4): 307pp Klimchouk, AB, Ford, DC, Palmer, AN, and Dreybrodt, W (eds), 2000, Speleogenesis: evolution of karst aquifers National Speleological Society, Huntsville, AL..

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The focus will change in RF applications as a result of the unique placement of the capacitor elements in peripheral circuits, where capacitor passive elements play a new role in circuits with signi cant topology different from digital CMOS receiver and transmitter circuits In RF CMOS and BiCMOS Silicon germanium, on-chip capacitor elements are needed for RF applications On-chip capacitor passive elements are used in peripheral circuits in RF applications Capacitors are used in many receiver and transmitters circuits in RF applications from low noise ampli ers (LNA), voltage controlled oscillators (VCO) to RF power ampli ers (PA) Capacitor elements are used in the following applications with RF circuits: Direct current (dc) blocking capacitors Input and output matching networks Output-to-input feedback subnetworks LC tank circuits Capacitor elements are also integrated into semiconductor chips for frequency-triggered ESD networks which respond to the ESD pulse waveform.

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An overall transmission channel of 64 kbps 1920 kbps is dynamically subdivided into lower rates suitable for transport of audio, video, and data for telematic purposes. The transmission channel is derived by synchronizing and ordering transmission over from one to six B-channels, from one to ve H0 channels or an H11 or H12 channel.11 The initial connection is the rst connection established and it carries the initial channel in each direction. The additional connections carry the necessary additional channels. The total rate of transmitted information is called the transfer rate. The transfer rate can be less than the capacity of the overall transmission channel. A single 64-kbps channel is structured into octets transmitted at an 8-kHz rate.12 Each bit position of the octets may be regarded as a subchannel of 8 kbps. A frame

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Capacitor elements are integrated into trigger networks and as impedance isolation elements for RF ESD input circuits and ESD power clamps, for the following: capacitor-coupled trigger networks; resistor capacitor (RC) trigger networks; LC-tank impedance isolation networks..